DocumentCode
2956486
Title
Propagation characteristics of Si nitride optical waveguide integrated with Si p-i-n diodes for light emitter and detector
Author
Yamada, A. ; Sakuraba, M. ; Murota, J. ; Wada, Kazuyoshi ; Kimerling, L.C.
Author_Institution
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear
2004
fDate
29 Sept.-1 Oct. 2004
Firstpage
142
Lastpage
144
Abstract
For light propagation in Si nitride optical waveguides with various width, bending loss is evaluated, and the bending radius dependence is clarified using a pair of Si p-i-n diodes integrated on Si substrate.
Keywords
elemental semiconductors; integrated optoelectronics; light emitting diodes; optical waveguides; p-i-n diodes; photodetectors; silicon; silicon compounds; waveguide discontinuities; Si; Si nitride optical waveguide; Si p-i-n diodes; SiN; bending loss; detector; light emitter; Integrated optics; Light emitting diodes; Optical propagation; Optical refraction; Optical scattering; Optical variables control; Optical waveguides; P-i-n diodes; Propagation losses; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN
0-7803-8474-1
Type
conf
DOI
10.1109/GROUP4.2004.1416706
Filename
1416706
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