• DocumentCode
    2956624
  • Title

    Silicon-on-insulator (SOI): a path to high-density silicon optoelectronics?

  • Author

    Green, Martin A.

  • Author_Institution
    Centre for Adv. Silicon Photovoltaics, Univ. of New South Wales, Sydney, NSW, Australia
  • fYear
    2004
  • fDate
    29 Sept.-1 Oct. 2004
  • Firstpage
    154
  • Lastpage
    155
  • Abstract
    With the greatly enhanced light-emission efficiencies in bulk silicon light emitting diodes (LEDs), they have investigated prospects for applying these improvements to the co-integration of optical and electronic functions into silicon-based microelectronics. One mitigating factor is the perceived need for microelectronics to move to SOI to maintain present rates of progress, with benefits for ultra-thin Si layers. For further investigation, optical properties of ultra-thin SOI are studied.
  • Keywords
    elemental semiconductors; integrated optoelectronics; light emitting diodes; silicon; silicon-on-insulator; Si; high-density silicon optoelectronics; light emitting diodes; silicon-on-insulator; Absorption; Australia; High speed optical techniques; Light emitting diodes; Microelectronics; Photonics; Photovoltaic cells; Potential well; Silicon on insulator technology; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2004. First IEEE International Conference on
  • Print_ISBN
    0-7803-8474-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2004.1416713
  • Filename
    1416713