High-power highly reliable 980-nm pump laser diodes

Author

Ishikawa, Seiichiro ; Fukagai, K. ; Chi, Hiroaki ; Kawai, Takaaki

Author_Institution

Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan

Volume

1

fYear

1995

fDate

30-31 Oct 1995

Firstpage

250

Abstract

The 980-nm InGaAs strained quantum-well lasers hold promise as pumping light sources for Er³⁺-doped fiber amplifiers. However, the lifetime of these lasers is limited by internal dark line defects (DLDs) and catastrophic optical damage (COD) at facets. In this paper, we focus on the degradation mechanisms of DLD and COD failures and verify that these types of failure do not occur within 300,000 hours at 100-mW output power through accelerated aging tests at various temperatures and light output powers

Keywords

III-V semiconductors; ageing; gallium arsenide; indium compounds; laser reliability; life testing; optical pumping; quantum well lasers; semiconductor device reliability; 100 mW; 300000 hour; 980 nm; InGaAs; accelerated aging; catastrophic optical damage; dark line defects; degradation; failure; high-power lasers; laser diodes; lifetime; pumping light sources; reliability; strained quantum-well lasers; Diode lasers; Erbium; Fiber lasers; Indium gallium arsenide; Laser excitation; Light sources; Optical fiber amplifiers; Power generation; Pump lasers; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484856

Filename

484856