Title :
A 3 V GSM baseband transmitter
Author_Institution :
LSI Logic Corp., Milpitas, CA, USA
Abstract :
A dual-channel baseband transmitter has been designed for GSM cellular phone application. It has been fabricated in a 0.35 /spl mu/m digital CMOS process as part of a single-chip solution for baseband processing. Each channel consists of a switched-capacitor DAC, a switched-capacitor filter, a class AB buffer, and an active RC filter. The lack of on-chip precision capacitors and resistors poses a major challenge in designing these analog building blocks. The current consumption is 8.8 mA and the total active area is 5.1 mm/sup 2/. The channel response meets the GMSK spectral mask, and a real GSM call has been made with this transmitter.
Keywords :
active filters; buffer circuits; cellular radio; digital-analogue conversion; radio transmitters; switched capacitor filters; 0.35 micron; 3 V; 8.8 mA; GSM; active RC filter; analog building blocks; cellular phone application; channel response; class AB buffer; current consumption; digital CMOS process; dual-channel baseband transmitter; single-chip solution; spectral mask; switched-capacitor DAC; switched-capacitor filter; total active area; Active filters; Analog circuits; Baseband; CMOS process; Capacitors; Cellular phones; GSM; Radio frequency; Resistors; Transmitters;
Conference_Titel :
VLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4766-8
DOI :
10.1109/VLSIC.1998.688023
