Title :
Explosive ion emission from sapphire upon femtosecond excitation
Author :
Reif, J. ; Henyk, M. ; Wolfframm, D.
Author_Institution :
Tech. Univ. Cottbus, Germany
Abstract :
Summary form only given. Femtosecond laser ablation of positive ions from transparent, polished slides of single crystalline Al/sub 2/O/sub 3/ is studied by time-of-flight mass spectrometry. The incident fluence from an amplified Ti:Sapphire laser could be varied between 0.5 J/cm/sup 2/ and 2.7 J/cm/sup 2/, the maximum being well below the single-shot damage threshold for Al/sub 2/O/sub 3/ at 3.0 J/cm/sup 2/. We investigated the emission of positive ions, negative ions, and electrons, usually averaging the signals over several hundred pulses. All experiments were conducted in the previously described ´strong etch´ regime, i.e. after a preceding incubation the samples show a strong response to the incident radiation. In this regime, the ion emission is characterized by a stable average rate, consisting of stochastically alternating pulses with high and with low yield. Thus, sampling over 500 pulses for each data point leads to stable, reliable, and reproducible results.
Keywords :
ion emission; laser ablation; sapphire; time of flight mass spectra; Al/sub 2/O/sub 3/; Coulomb explosion; explosive ion emission; femtosecond excitation; femtosecond laser ablation; incident laser fluence dependence; positive ions; single crystal sapphire; stable average rate; stochastically alternating pulses; strong etch regime; time-of-flight mass spectra; transparent polished slides; Electrons; Explosives; Ion emission; Kinetic energy; Laser ablation; Laser excitation; Optical pulses; Plasma temperature; Surface charging; Surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.910374