Title :
Measurement of lithographical proximity effects on matching of bipolar transistors
Author :
Tuinhout, H.P. ; Peters, W.C.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
A measurement approach is described that is used for very accurate bipolar transistor matching characterisation down to the sub 25 μV σΔVbe region or less than 0.1% σΔIcIc/ collector current mismatch. The sensitivity of this approach is demonstrated through characterisation of small lithographical proximity effects that were found to influence matching of NPN as well as of lateral PNP bipolar junction transistors
Keywords :
BiCMOS integrated circuits; bipolar integrated circuits; bipolar transistors; electric current; integrated circuit measurement; integrated circuit reliability; lithography; proximity effect (lithography); BiCMOS process; NPN bipolar junction transistors; bipolar transistor matching; bipolar transistor matching characterisation; collector current mismatch; lateral PNP bipolar junction transistors; lithographical proximity effects; lithographical proximity effects measurement; sensitivity; Artificial intelligence; Bipolar transistors; Current measurement; Electrical resistance measurement; Hardware; MOSFETs; Noise measurement; Proximity effect; Temperature measurement; Testing;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688025
