Measurement of lithographical proximity effects on matching of bipolar transistors

Author

Tuinhout, H.P. ; Peters, W.C.M.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1998

fDate

23-26 Mar 1998

Firstpage

7

Lastpage

12

Abstract

A measurement approach is described that is used for very accurate bipolar transistor matching characterisation down to the sub 25 μV σ_ΔVbe region or less than 0.1% σ_ΔIcIc/ collector current mismatch. The sensitivity of this approach is demonstrated through characterisation of small lithographical proximity effects that were found to influence matching of NPN as well as of lateral PNP bipolar junction transistors

Keywords

BiCMOS integrated circuits; bipolar integrated circuits; bipolar transistors; electric current; integrated circuit measurement; integrated circuit reliability; lithography; proximity effect (lithography); BiCMOS process; NPN bipolar junction transistors; bipolar transistor matching; bipolar transistor matching characterisation; collector current mismatch; lateral PNP bipolar junction transistors; lithographical proximity effects; lithographical proximity effects measurement; sensitivity; Artificial intelligence; Bipolar transistors; Current measurement; Electrical resistance measurement; Hardware; MOSFETs; Noise measurement; Proximity effect; Temperature measurement; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on

Conference_Location

Kanazawa

Print_ISBN

0-7803-4348-4

Type

conf

DOI

10.1109/ICMTS.1998.688025

Filename

688025