Characteristics of polycrystalline 3C-SiC thin films grown on thermal oxided Si wafers by single precursor hexamethyldisilane

This paper presents the growth conditions and characteristics of polycrystalline (poly) 3C-SiC thin films for micro/nano-electromechaical systems (M/NEMS) applications. The growth of the poly 3C-SiC thin film on oxided Si wafers was accomplished by APCVD using single precursor hexamethyldisilane (HMDS: Si₂(CH₃)₆). Depositions were performed under various temperatures and HMDS flow rates, which were adjusted from 1000 to 1200degC and from 6 to 8 sccm, respectively. Moreover, the effect of the addition of H₂ was studied as a means to improve surface roughness. The thermal and mechanical properties of poly 3C-SiC were investigated. The optimal growth conditions for the poly 3C-SiC thin film are a deposition temperature of 1100degC, HMDS flow rate of 8 sccm and a H₂ flow rate of 100 sccm.