Title :
Design and characterization of 1.55 μm InP-based MQW ridge and buried heterostructure lasers with low threshold currents and high modulation bandwidths
Author :
Yoon, H. ; Gutierrrez-Aitken, A.L. ; Bhattacharya, P. ; Lourdudoss, S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Summary form only given. In this work, we have optimized the design and fabrication of 1.55 μm InP-based ridge and BR lasers with compressively strained and strain compensated MQW separate confinement heterostructures. Our objective was to determine the performance characteristics of optimally designed lasers under low photon density conditions
Keywords :
III-V semiconductors; deformation; indium compounds; optical communication equipment; optical design techniques; optical modulation; optimisation; quantum well lasers; ridge waveguides; waveguide lasers; 1.55 μm InP-based MQW ridge waveguide lasers; 1.55 mum; BR lasers; InP; MQW separate confinement heterostructures; buried heterostructure lasers; compressively strained; high modulation bandwidths; low photon density conditions; low threshold currents; optimally designed lasers; performance characteristics; strain compensated; Bandwidth; Gold; Laser modes; Laser theory; Masers; Optical design; Optical waveguides; Quantum well devices; Solid lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484866
