Title :
Silicon-based rare earth-doped materials and devices grown by MBE
Author :
Chow, Peter ; Dong, Jianwei ; Zaytsev, Sergey ; Osinsky, Andrei ; Hertog, Brian
Author_Institution :
SVT-MBE, Eden Prairie, MN, USA
fDate :
29 Sept.-1 Oct. 2004
Abstract :
Fabrication of Er doped materials deposited on silicon into LED is demonstrated. A strong infrared luminescence is observed at 1540 nm wavelength region. They also have potential applications for planar optical communication.
Keywords :
erbium; light emitting diodes; molecular beam epitaxial growth; optical materials; photoluminescence; semiconductor doping; semiconductor growth; wide band gap semiconductors; 1540 nm; Er doped materials; LED; MBE; Si; infrared luminescence; silicon-based rare earth-doped materials; Doping; Erbium; Gallium nitride; Lattices; Molecular beam epitaxial growth; Optical amplifiers; Optical materials; Optical waveguides; Silicon; Wavelength measurement;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416734
