Title :
Correction of carrier lifetime measurements of semiconductor lasers
Author :
Shtengel, G.E. ; Ackerman, D.A. ; Morton, P.A. ; Flynn, E.J. ; Hybertsen, M.S.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The commonly used technique for carrier lifetime measurements in semiconductor lasers is corrected to take account of rapidly varying device impedance. Carrier lifetimes obtained with the new method provide vastly different values of carrier density and resolve inconsistencies in interpretation of recombination and spontaneous emission presented in the literature
Keywords :
carrier density; carrier lifetime; electric impedance; laser theory; laser variables measurement; semiconductor lasers; spontaneous emission; carrier density; carrier lifetime measurements; device impedance; semiconductor lasers; spontaneous emission; Charge carrier density; Charge carrier lifetime; Equations; Frequency; Impedance; Optical saturation; Radiative recombination; Semiconductor lasers; Solids; Spontaneous emission;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484870
