Effects of Al2O3 buffer layer on the characteristics of the AlN thin film type SAW device

Author

Ko, Bong-Chul ; Ro, Young-Shik ; Nam, Chang-Woo

Author_Institution

Sch. of Electr. Eng., Univ. of Ulsan, Ulsan

fYear

2007

fDate

3-6 Oct. 2007

Firstpage

476

Lastpage

479

Abstract

AlN thin film for SAW filter application was deposited on (100) silicon with and without Al₂O₃ buffer layer by reactive magnetron sputtering method. Al₂O₃ buffer layer improved properties of the AlN thin film deposited at enhanced sputtering rate. SEM, XRD, and AFM have been used to analyze structural properties and preferred orientation of AlN thin film. Insertion loss of SAW devices with AlN/Si structure and AlN/Al₂O₃/Si were about 33.27 dB and 30.20 dB, respectively.

Keywords

X-ray diffraction; alumina; atomic force microscopy; buffer layers; scanning electron microscopy; sputtering; surface acoustic wave filters; thin film circuits; AFM; Al₂O₃; AlN thin film type SAW filter applications; SEM; XRD; buffer layer; enhanced sputtering rate; reactive magnetron sputtering method; structural properties; Buffer layers; Insertion loss; Magnetic analysis; Magnetic separation; SAW filters; Semiconductor thin films; Silicon; Sputtering; Surface acoustic wave devices; X-ray scattering; Al2{O{in3 buffer layer; SAW filter; reactive magnetron sputter;

fLanguage

English

Publisher

ieee

Conference_Titel

Strategic Technology, 2007. IFOST 2007. International Forum on

Conference_Location

Ulaanbaatar

Print_ISBN

978-1-4244-3589-0

Electronic_ISBN

978-1-4244-1831-2

Type

conf

DOI

10.1109/IFOST.2007.4798635

Filename

4798635