Title :
Effects of Al2O3 buffer layer on the characteristics of the AlN thin film type SAW device
Author :
Ko, Bong-Chul ; Ro, Young-Shik ; Nam, Chang-Woo
Author_Institution :
Sch. of Electr. Eng., Univ. of Ulsan, Ulsan
Abstract :
AlN thin film for SAW filter application was deposited on (100) silicon with and without Al2O3 buffer layer by reactive magnetron sputtering method. Al2O3 buffer layer improved properties of the AlN thin film deposited at enhanced sputtering rate. SEM, XRD, and AFM have been used to analyze structural properties and preferred orientation of AlN thin film. Insertion loss of SAW devices with AlN/Si structure and AlN/Al2O3/Si were about 33.27 dB and 30.20 dB, respectively.
Keywords :
X-ray diffraction; alumina; atomic force microscopy; buffer layers; scanning electron microscopy; sputtering; surface acoustic wave filters; thin film circuits; AFM; Al2O3; AlN thin film type SAW filter applications; SEM; XRD; buffer layer; enhanced sputtering rate; reactive magnetron sputtering method; structural properties; Buffer layers; Insertion loss; Magnetic analysis; Magnetic separation; SAW filters; Semiconductor thin films; Silicon; Sputtering; Surface acoustic wave devices; X-ray scattering; Al2{O{in3 buffer layer; SAW filter; reactive magnetron sputter;
Conference_Titel :
Strategic Technology, 2007. IFOST 2007. International Forum on
Conference_Location :
Ulaanbaatar
Print_ISBN :
978-1-4244-3589-0
Electronic_ISBN :
978-1-4244-1831-2
DOI :
10.1109/IFOST.2007.4798635
