Title :
Static and dynamic properties of (InGa)As/GaAs quantum dot lasers
Author :
Kirstaedter, N. ; Schmidt, O. ; Ledentsov, N.N. ; Grundmann, M. ; Bimberg, D. ; Ustinov, V.M. ; Egorov, A.Yu. ; Zhukov, A.E. ; Maximov, M.V. ; Kop´ev, P.S. ; Alferov, Zh.I. ; Kosogov, A.O. ; Gösele, U. ; Heydenreich, J.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
Threshold current, polarization and carrier dynamics in (InGa)As/GaAs quantum dot (QD) structures are studied. Large T0 of 425 K, a low threshold current density of ~80 A cm-2 and an external quantum efficiency of 30% are measured between 50 K-120 K
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; 30 percent; 50 to 120 K; InGaAs-GaAs; carrier dynamics; characteristic temperature; dynamic properties; external quantum efficiency; polarization; quantum dot lasers; static properties; threshold current density; Excitons; Gallium arsenide; Gas lasers; Laser excitation; Laser modes; Luminescence; Quantum dot lasers; Stationary state; Threshold current; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484874
