Title :
InGaAs/GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD
Author :
Lammert, R.M. ; Forbes, D.V. ; Smith, G.M. ; Osowski, M.L. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
We report the design and operation of InGaAs/GaAs lasers with monolithically integrated intracavity electroabsorption modulators fabricated by an atmospheric pressure metalorganic chemical vapor deposition (MOCVD) three-step selective-area growth process
Keywords :
III-V semiconductors; chemical vapour deposition; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical fabrication; quantum confined Stark effect; quantum well lasers; InGaAs-GaAs; QCSE modulator; atmospheric pressure MOCVD; fabrication; intracavity electroabsorption modulator; monolithically integration; quantum-well laser; selective-area growth; Absorption; Epitaxial growth; Extinction ratio; Gallium arsenide; Indium gallium arsenide; MOCVD; Optical losses; Optical modulation; Power generation; Quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484878
