Title :
Aluminum layer formation on aluminum nitride ceramic by irradiation with a TEA CO2 laser
Author :
Sumiyoshi, Tetsumi ; Takahashi, Akihisa ; Obara, Minoru
Author_Institution :
Dept. of Electr. Eng., Keio Univ., Yokohama, Japan
Abstract :
Recently aluminum nitride (AlN) has become an important material for substrates of high power opto-electronic devices such as laser diodes due to its attractive thermo-physical properties such as high thermal conductivity, high electrical resistivity, and low thermal expansion close to that of silicon. AlN is one of the covalent bonding ceramic and sublimates at high temperature. The irradiation with the TEA CO2 laser induces the decomposition and leaves the metallic Al layer. In the present work, the variation of morphology and electrical resistivity of the AlN surface irradiated with the TEA CO2 laser are investigated
Keywords :
aluminium; carbon compounds; ceramics; electrical resistivity; gas lasers; laser beam applications; metallic thin films; optical fabrication; optical films; optoelectronic devices; semiconductor lasers; substrates; thermal conductivity; thermal expansion; Al; AlN; AlN surface; CO2; TEA CO2 laser irradiation; aluminum layer formation; aluminum nitride ceramic; attractive thermo-physical properties; covalent bonding ceramic; decomposition; electrical resistivity o; high electrical resistivity; high power opto-electronic devices; high temperature; high thermal conductivity; laser diodes; low thermal expansion; morphology; sublimates; substrates; Aluminum nitride; Ceramics; Conducting materials; Diode lasers; Electric resistance; Optical materials; Optoelectronic devices; Thermal conductivity; Thermal expansion; Thermal resistance;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484883
