Title :
Monitoring of SRAM gate patterns in KrF lithography by ellipsometry
Author :
Arimoto, Hiroshi ; Nakamura, S. ; Miyata, S. ; Nakagawa, K.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
This paper reports on the ellipsometric monitoring of SRAM gate patterns in KrF lithography. A multivariable regression analysis was applied to predict gate lengths by using ellipsometric parameters. A good agreement (3σ=8.7 nm) between the measured width by CD-SEM and the predicted widths was achieved. Standard deviation of the predicted width (repeatability) was 0.5 nm
Keywords :
MOS memory circuits; SRAM chips; ellipsometry; integrated circuit measurement; integrated circuit yield; krypton compounds; laser materials processing; monitoring; photolithography; scanning electron microscopy; size measurement; statistical analysis; CD-SEM; KrF; KrF lithography; SRAM gate pattern monitoring; SRAM gate patterns; ellipsometric monitoring; ellipsometric parameters; ellipsometry; gate lengths; measured pattern width; multivariable regression analysis; predicted pattern width; repeatability; standard deviation; Ellipsometry; Lithography; Monitoring; Optical films; Process design; Random access memory; Regression analysis; Resists; Semiconductor films; Silicon compounds;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688036
