Title :
An ultrafast-ultrafine scanning force photoconductive probe
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
Abstract :
Road-maps used by the semiconductor industry for device and circuit fabrication in United States and Japan have set targets for 0.1 micron design in general production by the year 2007. The need for increased temporal resolution on nanometric structures has led us to investigate the use of a scanning force microscope (SFM) with the added capability of picosecond-time-resolved waveform measurement. With this tool we are able to measure both nanometer dimensions and picosecond durations using a single probe
Keywords :
atomic force microscopy; high-speed optical techniques; image resolution; integrated circuit design; integrated circuit testing; photoconducting devices; probes; 0.1 micron design; 200 fs; 2007; IC testing; Japan; United States; circuit fabrication; increased temporal resolution; nanometer dimension measurement; nanometric structures; picosecond durations; picosecond-time-resolved waveform measurement; scanning force microscope; semiconductor industry; single probe; ultrafast-ultrafine scanning force photoconductive probe; Circuit testing; Electrons; Integrated circuit measurements; Optical microscopy; Photoconducting devices; Photoconductivity; Probes; Sampling methods; Substrates; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484893
