Power-dependent polarization switching and pulse narrowing in a semiconductor quantum well amplifier

Author

Lin, Ming-Shan ; Huang, Din-Wei ; Yang, C.C.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

1

fYear

1995

fDate

30-31 Oct 1995

Firstpage

333

Abstract

In this paper, we report the experimental results of efficient nonlinear polarization switching in a single quantum well amplifier and show that the numerical simulations based on a simple model agree reasonably well with the experimental data. The sample consisted of an InGaAs well, GaAs barriers, and graded AlGaAs cladding layers. It lased at 974 nm. The electro-luminescence shows a peak near 970 nm in the TE mode and a peak near 940 nm in the TM mode

Keywords

claddings; electroluminescence; gallium arsenide; indium compounds; infrared spectra; laser modes; light polarisation; optical switches; quantum well lasers; semiconductor switches; 940 nm; 970 nm; 974 nm; AlGaAs; GaAs; GaAs barriers; InGaAs; InGaAs well; TE mode; TM mode; efficient nonlinear polarization switching; electro-luminescence; graded AlGaAs cladding layers; numerical simulations; power-dependent polarization switching; pulse narrowing; semiconductor quantum well amplifier; single quantum well amplifier; Geometrical optics; Nonlinear optical devices; Optical polarization; Optical pumping; Optical saturation; Power amplifiers; Power semiconductor switches; Pulse amplifiers; Semiconductor optical amplifiers; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484895

Filename

484895