DocumentCode
295730
Title
Femtosecond all-optical AND gates based on low-temperature-grown Be-doped strained InGaAs/InAlAs multiple quantum wells
Author
Takahashi, R. ; Choi, W.-Y. ; Kawamura, Y. ; Iwamura, H.
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
1
fYear
1995
fDate
30-31 Oct 1995
Firstpage
343
Abstract
We developed an ultrafast all-optical AND gate at 1.55μm based on low-temperature-grown Be-doped strained InGaAs/InAlAs MQWs. The device has femtosecond response time, very large contrast ratio, and wide operational wavelength range as well as polarization insensitivity
Keywords
III-V semiconductors; aluminium compounds; beryllium; gallium arsenide; high-speed optical techniques; indium compounds; optical logic; semiconductor quantum wells; 1.55 micron; InGaAs:Be-InAlAs; contrast ratio; femtosecond response time; low-temperature-grown Be-doped strained InGaAs/InAlAs multiple quantum well; nonlinearity; semiconductor; ultrafast all-optical AND gate; Absorption; Indium compounds; Indium gallium arsenide; Mirrors; Optical pumping; Optical saturation; Probes; Quantum well devices; Reflectivity; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484899
Filename
484899
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