Title :
Femtosecond all-optical AND gates based on low-temperature-grown Be-doped strained InGaAs/InAlAs multiple quantum wells
Author :
Takahashi, R. ; Choi, W.-Y. ; Kawamura, Y. ; Iwamura, H.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
We developed an ultrafast all-optical AND gate at 1.55μm based on low-temperature-grown Be-doped strained InGaAs/InAlAs MQWs. The device has femtosecond response time, very large contrast ratio, and wide operational wavelength range as well as polarization insensitivity
Keywords :
III-V semiconductors; aluminium compounds; beryllium; gallium arsenide; high-speed optical techniques; indium compounds; optical logic; semiconductor quantum wells; 1.55 micron; InGaAs:Be-InAlAs; contrast ratio; femtosecond response time; low-temperature-grown Be-doped strained InGaAs/InAlAs multiple quantum well; nonlinearity; semiconductor; ultrafast all-optical AND gate; Absorption; Indium compounds; Indium gallium arsenide; Mirrors; Optical pumping; Optical saturation; Probes; Quantum well devices; Reflectivity; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484899
