Title :
Evaluation of the scaling limit of a narrow U-groove isolation structure by using test structures
Author :
Tamaki, Yoichi ; Hashimoto, Takashi
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
This paper describes the scaling limit of the width and the structure of narrow isolation U-grooves as determined using new test structures to evaluate the isolation capacitance and isolation breakdown voltage. We conclude that the minimum width of the isolation U-groove will be limited by increased isolation capacitance, and propose an effective method to overcome this problem. Future SOI structures are also discussed
Keywords :
bipolar integrated circuits; capacitance; electric breakdown; integrated circuit testing; isolation technology; large scale integration; silicon-on-insulator; SOI structures; Si-SiO2; bipolar technology; isolation U-groove; isolation breakdown voltage; isolation capacitance; narrow U-groove isolation structure; narrow U-groove isolation structure scaling; narrow isolation U-groove width; scaling limit; test structures; BiCMOS integrated circuits; Bipolar transistors; Capacitance; Circuit testing; Electrodes; Etching; Fabrication; Oxidation; Signal processing; Substrates;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688045