Optical properties of ZrO2 films fabricated by ion beam sputtering deposition at low temperature

Author

Atuchin, V.V. ; Aliev, V.Sh. ; Kruchinin, V.N. ; Ramana, C.V.

Author_Institution

Lab. of Opt. Mater. & Struct., SB RAS, Novosibirsk

fYear

2007

fDate

3-6 Oct. 2007

Firstpage

529

Lastpage

531

Abstract

ZrO₂ films have been deposited on Si(100) by ion beam sputtering deposition (IBSD) at temperature T = 70degC. Film structure properties and ZrO₂/Si interface were observed with reflection high energy electron diffraction (RHEED) and high resolution transmission electron microscopy (HRTEM). Optical properties of the film were studied by spectroscopic ellipsometry over the spectral range 250-900 nm.

Keywords

crystal structure; ellipsometry; interface structure; ion beam assisted deposition; optical films; reflection high energy electron diffraction; sputter deposition; transmission electron microscopy; ultraviolet spectra; visible spectra; zirconium compounds; Si; ZrO₂; film structure; high resolution transmission electron microscopy; ion beam sputtering deposition; optical properties; reflection high energy electron diffraction; temperature 70 C; wavelength 250 nm to 900 nm; Electron optics; Energy resolution; Ion beams; Optical diffraction; Optical films; Optical reflection; Particle beam optics; Semiconductor films; Sputtering; Temperature; ZrO2/Si; ion beam sputtering deposition;

fLanguage

English

Publisher

ieee

Conference_Titel

Strategic Technology, 2007. IFOST 2007. International Forum on

Conference_Location

Ulaanbaatar

Print_ISBN

978-1-4244-3589-0

Electronic_ISBN

978-1-4244-1831-2

Type

conf

DOI

10.1109/IFOST.2007.4798650

Filename

4798650