Title :
Identification of electronic Stark levels in Yb/sup 3+/-doped sesquioxides by pair spectroscopy
Author :
Peters, V. ; Mix, E. ; Petermann, K. ; Huber, G. ; Noginov, M.A.
Author_Institution :
Inst. fur Laser-Phys., Hamburg Univ., Germany
Abstract :
Summary form only given. Ytterbium doped insulators have been subject of intensive research for their unique spectroscopic properties as well as for their laser properties. A central problem is the exact assignment of the electronic Stark levels of the Yb/sup 3+/-ions. Due to strong electron phonon coupling the unambiguous identification of the Yb Stark levels is not possible for many materials, including the well known Y/sub 3/Al/sub 5/O/sub 12/. Yb/sup 3+/ has only one excited 4f state separated by about 10,000 cm/sup -1/ from the ground state. This allows the study of extremely weak pair transitions within the bandgap of the host material which in most rare earth ions are covered by other 4f states. Pair effects in Yb-systems have been first observed by Nakazawa in 1970. Pair transitions show a much lower electron phonon coupling than single ion transitions, which allows to assign the electronic levels with much more clarity.
Keywords :
Stark effect; electron-phonon interactions; excited states; impurity absorption spectra; infrared spectra; laser transitions; optical materials; solid lasers; visible spectra; ytterbium; 4f states; Stark levels; Yb-doped insulators; Yb-systems; Yb/sup 3+/-doped sesquioxides; Yb/sup 3+/-ions; bandgap; electron phonon coupling; electronic Stark levels; electronic levels; excited 4f state; extremely weak pair transitions; ground state; host material; laser properties; pair effects; pair spectroscopy; pair transitions; rare earth ions; single ion transitions; spectroscopic properties; Absorption; Crystalline materials; Crystals; Electrons; Optical materials; Phonons; Powders; Silicon compounds; Spectroscopy; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.910405