DocumentCode
2957753
Title
Ellipsometric measurements on single-crystal silicon spheres [for Avogadro´s constant determination]
Author
Danzebrink, H.U. ; Wolff, H. ; Becker, P. ; Koenders, L.
Author_Institution
Phys. Tech. Bundesanstalt, Braunschweig, Germany
fYear
1998
fDate
6-10 July 1998
Firstpage
389
Lastpage
390
Abstract
Beside other parameters the growth of oxide layers on silicon surfaces depends on the surface preparation and on the crystal orientation. Measurements of the oxide layer thicknesses on silicon spheres are described. The results show a strong dependence on the crystal orientations which may originate from the polishing process. After HF-etching this orientation effect cannot be distinguished anymore.
Keywords
constants; crystal orientation; ellipsometry; etching; polishing; silicon; thickness measurement; volume measurement; Avogadro´s constant determination; HF-etching; Si; crystal orientation; ellipsometric measurements; growth of oxide layers; oxide layer thickness measurement; phase shifting interferometry; polishing process; single-crystal silicon spheres; surface preparation; volume measurement; Instruments; Optical beams; Optical films; Photodiodes; Rough surfaces; Silicon; Substrates; Surface roughness; Thickness measurement; Volume measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 1998 Conference on
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-5018-9
Type
conf
DOI
10.1109/CPEM.1998.699965
Filename
699965
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