DocumentCode :
2957937
Title :
Monitoring method of the tunnel oxide degradation by MOS capacitor
Author :
Hazama, Hiroaki
Author_Institution :
Toshiba Corp., Yokohama, Japan
fYear :
1998
fDate :
23-26 Mar 1998
Firstpage :
107
Lastpage :
111
Abstract :
A tunnel oxide degradation monitoring method using a simple MOS capacitor has been examined. It was found that the Vth shift of an erased flash EEPROM cell after a number of program/erase cycles was correlated with the gate voltage shift to sustain constant current injection under bi-polarity FN (Fowler Nordheim) injection by using a MOS capacitor with source junction. Using an improved experimental set-up, bi-polarity FN injection could be performed for simple MOS capacitors without a source junction, even in a p-type substrate
Keywords :
EPROM; MOS capacitors; MOS memory circuits; dielectric thin films; integrated circuit reliability; integrated circuit testing; monitoring; MOS capacitor; MOS capacitor source junction; Si; SiO2-Si; bi-polarity FN injection; bi-polarity Fowler Nordheim injection; constant current injection; erased flash EEPROM cell; gate voltage shift; monitoring method; p-type substrate; program/erase cycles; threshold voltage shift; tunnel oxide degradation; tunnel oxide degradation monitoring method; Capacitance-voltage characteristics; Degradation; EPROM; Leakage current; MOS capacitors; MOSFET circuits; Monitoring; Space vector pulse width modulation; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
Type :
conf
DOI :
10.1109/ICMTS.1998.688051
Filename :
688051
Link To Document :
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