Title :
Monitoring method of the tunnel oxide degradation by MOS capacitor
Author_Institution :
Toshiba Corp., Yokohama, Japan
Abstract :
A tunnel oxide degradation monitoring method using a simple MOS capacitor has been examined. It was found that the Vth shift of an erased flash EEPROM cell after a number of program/erase cycles was correlated with the gate voltage shift to sustain constant current injection under bi-polarity FN (Fowler Nordheim) injection by using a MOS capacitor with source junction. Using an improved experimental set-up, bi-polarity FN injection could be performed for simple MOS capacitors without a source junction, even in a p-type substrate
Keywords :
EPROM; MOS capacitors; MOS memory circuits; dielectric thin films; integrated circuit reliability; integrated circuit testing; monitoring; MOS capacitor; MOS capacitor source junction; Si; SiO2-Si; bi-polarity FN injection; bi-polarity Fowler Nordheim injection; constant current injection; erased flash EEPROM cell; gate voltage shift; monitoring method; p-type substrate; program/erase cycles; threshold voltage shift; tunnel oxide degradation; tunnel oxide degradation monitoring method; Capacitance-voltage characteristics; Degradation; EPROM; Leakage current; MOS capacitors; MOSFET circuits; Monitoring; Space vector pulse width modulation; Stress; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688051
