DocumentCode
2958114
Title
The effect of residual adsorbed gases on silicon isotope amount ratio measurements [in Avogadro constant determination]
Author
Valkiers, S. ; Gonfiantini, R. ; Taylor, P. ; De Bievre, P.
Author_Institution
Inst. for Reference Mater. & Meas., Eur. Comm., Geel, Belgium
fYear
1998
fDate
6-10 July 1998
Firstpage
392
Abstract
Summary form only given, as follows. An adsorption model developed for molecular flow inlet system was applied successfully to remove memory effects in high accuracy isotopic measurements, especially in the Si isotopic measurements leading to improved values for the Avogadro constant.
Keywords
adsorption; constants; isotope relative abundance; isotope separation; mass measurement; mass spectra; mass spectroscopy; silicon; Avogadro constant determination; Si; SiF/sub 4/; adsorption model; high accuracy isotopic measurements; mass spectrometer inlet system; memory effects removal; molar mass; molecular flow inlet system; residual adsorbed gases effect; silicon isotope amount ratio measurements; Fluid flow measurement; Gases; Lead isotopes; Linearity; Mass spectroscopy; Silicon; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 1998 Conference on
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-5018-9
Type
conf
DOI
10.1109/CPEM.1998.699967
Filename
699967
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