Title :
New characterization methodology for flash memory cell using CAST structure
Author :
Fan, Mcdonald ; Liu, U.C. ; Guo, J.C. ; Wang, M.T. ; Shone, F.
Author_Institution :
Dept. of Device, Macronix Int. Co. Ltd., Hsinchu, Taiwan
Abstract :
Hole trapping occurred during program/erase (P/E) operation in a flash EEPROM. To the authors´ knowledge, there is still no effective method for characterization of the endurance performance of flash EEPROMs at the key test level. In this paper, we propose a simple and fast method to evaluate the endurance performance of a 12 kbit flash EEPROM cell array stress test (CAST) structure. Based on this method, we can easily detect subtle defects as well as the effectiveness of the hole detrapping method used to suppress the tail-bits
Keywords :
EPROM; hole traps; integrated circuit reliability; integrated circuit testing; 12 kbit; CAST structure characterization methodology; defect detection; endurance performance; flash EEPROM; hole detrapping method; tail-bit suppression; test flash EEPROM cell array stress test structure; Circuit testing; Current measurement; Dielectrics; EPROM; Flash memory; Flash memory cells; Ink; Product development; Stress; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688052
