Design of a SiGe Reconfigurable Power Amplifier for RF Applications: Device and Multi-standard Considerations

Author

Deltimple, N. ; Kerherve, E. ; Deval, Yann ; Belot, D. ; Jarry, P.

Author_Institution

Bordeaux 1 Univ., Talence

fYear

2006

fDate

10-13 Dec. 2006

Firstpage

331

Lastpage

334

Abstract

A low cost integrated reconfigurable power amplifier (PA), dedicated to multi-mode, multi-standard radio frequency front-end (RFFE), is proposed. Power considerations are taken into account in the design through the use of emitter ballasted HBT´s and special care on the layout. The reconfigurable amplifier topology is presented, made up of two-stages independently controllable by biasing scheme. It allows the dynamic modification of the RF transistor quiescent current, to adapt both its linearity and its output power in order to fulfill several standards specifications. The PA uses 2.5 V supply voltage and was designed using a 0.25 mum SiGe BiCMOS technology.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; integrated circuit design; power amplifiers; BiCMOS technology; RF applications; RF transistor quiescent current; biasing scheme; emitter ballasted HBT; integrated reconfigurable power amplifier; radio frequency front-end; size 0.25 mum; voltage 2.5 V; Costs; Electronic ballasts; Germanium silicon alloys; Linearity; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on

Conference_Location

Nice

Print_ISBN

1-4244-0395-2

Electronic_ISBN

1-4244-0395-2

Type

conf

DOI

10.1109/ICECS.2006.379792

Filename

4263370