Study of low frequency noise in scaled down silicon CMOS transistors

Author

Boutchacha, T. ; Ghibaudo, G. ; Blmekki, B.

Author_Institution

Inst. d´´Electron., USTO, France

fYear

1998

fDate

23-26 Mar 1998

Firstpage

139

Abstract

Summary form only given. A detailed investigation of the low frequency (LF) noise in 0.25 μm NMOS and PMOS devices is carried out. A theoretical analysis of the drain current noise and the gate voltage noise characteristics is developed in the framework of a carrier number fluctuation model as well as corrected mobility fluctuations. The scattering parameter is found to be lower for NMOS transistors, while the value of PMOS is relatively high, in agreement with static mobility data. This justifies the enhancement of the correlated mobility noise for PMOS devices

Keywords

1/f noise; CMOS integrated circuits; S-parameters; carrier density; carrier mobility; integrated circuit design; integrated circuit modelling; integrated circuit noise; 0.25 micron; LF noise; NMOS devices; NMOS transistors; PMOS devices; PMOS transistors; carrier number fluctuation model; corrected mobility fluctuations; correlated mobility noise; drain current noise; gate voltage noise; low frequency noise; scaled down silicon CMOS transistors; scattering parameter; static mobility data; Fluctuations; Frequency; Low-frequency noise; MOS devices; MOSFETs; Scattering parameters; Semiconductor device noise; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on

Conference_Location

Kanazawa

Print_ISBN

0-7803-4348-4

Type

conf

DOI

10.1109/ICMTS.1998.688057

Filename

688057