Title :
Asymmetric condition computed from the four tone input GaN HEMT
Author :
Yildirim, Remzi ; Çeleb, F.V. ; Yavuzcan, H. Güçlü ; Gökrem, Levent
Author_Institution :
Fac. of Ind. Arts, Gazi Univ., Ankara, Turkey
Abstract :
Asymmetric condition among the IMD components with respect to gate to source voltage (Vgs) of four tone input GaN HEMT is determined which is based on the carrier frequency (¿0). In addition to that, the critical operating frequency interval is established.
Keywords :
III-V semiconductors; Volterra series; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT; IMD components; asymmetric condition; carrier frequency; critical operating frequency; gate-source voltage; high electron mobility transistor; Art; Capacitance; Computer industry; Feedback; Frequency; Gallium nitride; HEMTs; MODFETs; Transconductance; Voltage; Asymmetry; HEMT; Inte rmodulation; Volterra Series;
Conference_Titel :
Application of Information and Communication Technologies, 2009. AICT 2009. International Conference on
Conference_Location :
Baku
Print_ISBN :
978-1-4244-4739-8
Electronic_ISBN :
978-1-4244-4740-4
DOI :
10.1109/ICAICT.2009.5372485
