Title :
Measurement of `1/f´ noise in narrow poly-silicon emitter bipolar transistor structures
Author_Institution :
Bipolar Characterization Group, GEC Plessey Semicond., Oldham, UK
Abstract :
We present here our initial findings on low frequency noise measurements for shallow emitter polysilicon contacted transistors. Structures from two particular GEC Plessey Semiconductors´ technologies were selected for measurement, to assess the change in low frequency noise performance and modelling issues as bipolar technologies move to ever shallower emitter junctions and smaller emitter windows. We also demonstrate an alternative approach to the problem of identifying the intrinsic corner frequency. Details of our measurement technique are given along with the results of some simulations based on SPICE coefficients extracted from these measurements
Keywords :
1/f noise; SPICE; bipolar transistors; elemental semiconductors; semiconductor device models; semiconductor device noise; semiconductor device testing; silicon; 1/f noise; SPICE coefficients; Si; bipolar technologies; emitter junctions; emitter windows; intrinsic corner frequency; low frequency noise measurements; low frequency noise modelling; low frequency noise performance; measurement technique; narrow polysilicon emitter bipolar transistor structures; shallow emitter polysilicon contacted transistor structures; shallow emitter polysilicon contacted transistors; simulations; 1f noise; Bipolar transistors; Current measurement; Frequency measurement; Grain boundaries; Low-frequency noise; Low-noise amplifiers; Noise generators; Noise measurement; Semiconductor device noise;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688060
