Title :
A prediction method of oxide breakdown caused by defects in SiO2 films
Author :
Uchida, Hidetsugu ; Hirashita, Norio
Author_Institution :
Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
A new prediction method for the so-called B mode failure, oxide breakdown at a lower electric field in step voltage tests, has been investigated. Two assumptions are used in this model, i.e. that the defect origins are of a larger size than the oxide thickness, and the presence of the defect-invisible region. The B mode failure distribution calculated using this model agrees well with measured data for oxide thickness ranging from 6.1 to 14.8 nm. This model is useful for interpretation of the dependence of the B mode failure distribution on oxide thickness and gate area in step voltage tests
Keywords :
dielectric thin films; electric breakdown; electric fields; failure analysis; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; integrated circuit yield; silicon compounds; 6.1 to 14.8 nm; B mode failure; B mode failure distribution; Si; SiO2 film defects; SiO2 films; SiO2-Si; defect origins; defect-invisible region; electric field; gate area; model; oxide breakdown; oxide breakdown prediction method; oxide thickness; step voltage tests; Breakdown voltage; Electric breakdown; Equations; MOS capacitors; Pollution measurement; Prediction methods; Research and development; Testing; Thickness measurement; Very large scale integration;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688062
