• DocumentCode
    2959985
  • Title

    Power and Failure Analysis of CAM Cells Due to Process Variations

  • Author

    Bennaser, Mahmoud ; Moritz, Csaba Andras

  • Author_Institution
    Univ. of Massachusetts, Amherst
  • fYear
    2006
  • fDate
    10-13 Dec. 2006
  • Firstpage
    608
  • Lastpage
    611
  • Abstract
    Process variations arise due to processing and masking limitations, and result in random or spatially varying deviation from the designed parameter values. Changes in these parameters cause electrical parameters to vary, such as effective channel length and threshold voltage. These mismatches modify the strength of individual devices resulting in various failures. In this paper, we present a failure analysis of CAM cells under process variation in 32-nm CMOS technology. We investigate the effects of variations in Leff and Vt on the performance and power consumption of CAM cells. Finally, we discuss techniques at circuit and architecture levels to mitigate the effect of process variation on CAM access.
  • Keywords
    CMOS memory circuits; content-addressable storage; failure analysis; low-power electronics; CAM cells; CMOS technology; channel length; failure analysis; power analysis; power consumption; process variations; size 32 nm; threshold voltage; CADCAM; CMOS process; CMOS technology; Circuits; Computer aided manufacturing; Energy consumption; Failure analysis; Geometry; Manufacturing processes; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on
  • Conference_Location
    Nice
  • Print_ISBN
    1-4244-0395-2
  • Electronic_ISBN
    1-4244-0395-2
  • Type

    conf

  • DOI
    10.1109/ICECS.2006.379862
  • Filename
    4263440