DocumentCode
2959985
Title
Power and Failure Analysis of CAM Cells Due to Process Variations
Author
Bennaser, Mahmoud ; Moritz, Csaba Andras
Author_Institution
Univ. of Massachusetts, Amherst
fYear
2006
fDate
10-13 Dec. 2006
Firstpage
608
Lastpage
611
Abstract
Process variations arise due to processing and masking limitations, and result in random or spatially varying deviation from the designed parameter values. Changes in these parameters cause electrical parameters to vary, such as effective channel length and threshold voltage. These mismatches modify the strength of individual devices resulting in various failures. In this paper, we present a failure analysis of CAM cells under process variation in 32-nm CMOS technology. We investigate the effects of variations in Leff and Vt on the performance and power consumption of CAM cells. Finally, we discuss techniques at circuit and architecture levels to mitigate the effect of process variation on CAM access.
Keywords
CMOS memory circuits; content-addressable storage; failure analysis; low-power electronics; CAM cells; CMOS technology; channel length; failure analysis; power analysis; power consumption; process variations; size 32 nm; threshold voltage; CADCAM; CMOS process; CMOS technology; Circuits; Computer aided manufacturing; Energy consumption; Failure analysis; Geometry; Manufacturing processes; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on
Conference_Location
Nice
Print_ISBN
1-4244-0395-2
Electronic_ISBN
1-4244-0395-2
Type
conf
DOI
10.1109/ICECS.2006.379862
Filename
4263440
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