Analysis of a new test pattern for measuring the carrier-carrier scattering mobilities versus injection level in silicon

Author

Bellone, Salvatore ; Persiano, Giovanni Vito ; Parrella, Claudio

Author_Institution

Salerno Univ., Italy

fYear

1998

fDate

23-26 Mar 1998

Firstpage

171

Lastpage

176

Abstract

A recently proposed technique for determining injection-dependent carrier mobilities is explored and enhanced. Better control of the injection level is obtained by adding a new feature to the basic test pattern for direct estimation of the carrier density operated by the measure. In particular, numerical simulation of the measurement approach allows us to quantify the effect of the parasitic capacitance and the test pattern geometry on the mobility measurement

Keywords

carrier density; electron mobility; elemental semiconductors; hole mobility; numerical analysis; p-i-n diodes; power bipolar transistors; power semiconductor diodes; semiconductor device models; semiconductor device testing; silicon; BJTs; Si; carrier density estimation; carrier injection level; carrier-carrier scattering mobilities; injection level control; injection-dependent carrier mobilities; mobility measurement; numerical simulation; p-i-n diodes; parasitic capacitance; power bipolar devices; silicon; test pattern analysis; test pattern feature; test pattern geometry; Artificial intelligence; Charge carrier density; Charge carrier processes; Density measurement; Electron mobility; P-i-n diodes; Pattern analysis; Scattering; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on

Conference_Location

Kanazawa

Print_ISBN

0-7803-4348-4

Type

conf

DOI

10.1109/ICMTS.1998.688063

Filename

688063