A complex polynomial predistorter chip in CMOS for baseband or IF linearization of RF power amplifiers

This paper describes the implementation of a 5th order complex polynomial predistorter chip in CMOS for linearization of RF power amplifiers. The architecture chosen allows operation either at baseband or IF. The chip was implemented in a 0.8 μm CMOS process and operates at 3.3 V supply voltage with 60 mW power consumption. The special architecture of the polynomial predistorter is exploited to reduce the complexity and current consumption of individual blocks. Two-tone measurements performed at an IF of 200 MHz demonstrates that third order intermodulation products can be suppressed by more than 30 dB