DocumentCode
2960445
Title
High impact bonding to improve reliability of VLSI die in plastic packages
Author
McKenna, Robert G. ; Mahle, Richard L.
Author_Institution
Texas Instrum. Inc., Houston, TX, USA
fYear
1989
fDate
22-24 May 1989
Firstpage
424
Lastpage
427
Abstract
Tests performed to determine the critical thermosonic bond parameters and their impact on gold-wire ball bond reliability in large, high-pin-count, plastic-encapsulated integrated circuits are discussed. Bond-pad cratering, lifted metal, and lifted balls are recognized as a serious quality problem in the industry, resulting in assembly yield loss as well as potential reliability problems. It has been found that the strength of the silicon dioxide structure beneath the bond pads is greater for short-duration dynamic forces than for static force. The application of much higher bond forces during ball touchdown, combined with a reduction of static mash force, was found to reduce damage to the subsurface structure and improve reliability of ICs known to be sensitive to cratering problems
Keywords
VLSI; circuit reliability; gold; lead bonding; packaging; Au wire ball bond; SiO2; VLSI die; assembly yield loss; ball touchdown; bond-pad cratering; critical thermosonic bond parameters; lifted balls; lifted metal; plastic packages; plastic-encapsulated integrated circuits; reliability; short-duration dynamic forces; static mash force; Assembly; Bonding forces; Circuit testing; Integrated circuit reliability; Integrated circuit testing; Integrated circuit yield; Metals industry; Performance evaluation; Plastics; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components Conference, 1989. Proceedings., 39th
Conference_Location
Houston, TX
Type
conf
DOI
10.1109/ECC.1989.77784
Filename
77784
Link To Document