DocumentCode :
29606
Title :
A Low-Power, Radiation-Resistant ASIC for SDD-Based X-Ray Spectrometers
Author :
Shaorui Li ; De Geronimo, G. ; Wei Chen ; D´Anadragora, Alessio ; Fried, J. ; Zheng Li ; Pinelli, Donald A. ; Smith, G.C. ; Gaskin, Jessica A. ; Ramsey, B.D.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
Volume :
60
Issue :
4
fYear :
2013
fDate :
Aug. 2013
Firstpage :
3057
Lastpage :
3062
Abstract :
We present an Application Specific Integrated Circuit (ASIC) for high resolution X-ray spectrometers (XRS) in radiation harsh environment (such as Jovian system). The ASIC was designed to read out signals from low resistivity pixelated Silicon-Drift-Detectors (SDD) to ensure radiation hardness. The readout is done by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW and provides 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, pile-up rejection, and peak detection with analog memory. The readout is sparse and based on a custom low-power tri-stable low-voltage differential signaling digital interface. A unit of 64 SDD pixels, read out by four ASICs, covers an area of 12.8 cm2, and dissipates less than 20 mW/cm2. The ASICs were powered on and irradiated using a beam line with 203 MeV protons, to total doses ranging from 0.25 Mrad to 12 Mrad. Performance degradation due to radiation-induced leakage current was observed to peak around 2 Mrad dose. Critical contributors to the degradation were identified through simulation and measurements, and corresponding circuitry was thus modified to address the issues. Measurements on the radiation-resistant design have shown excellent radiation resistance at total doses ranging from 1 to 8 Mrad.
Keywords :
X-ray spectrometers; amplification; anodes; application specific integrated circuits; elemental semiconductors; lead bonding; leakage currents; radiation hardening (electronics); readout electronics; signal resolution; silicon; SDD-based X-ray spectrometers; Si; application specific integrated circuit; baseline stabilization; beam line; electron volt energy 203 MeV; high resolution X-ray spectrometers; low resistivity pixelated drift-detectors; low-noise charge amplification; low-power tristable low-voltage differential signaling digital interface; pile-up rejection; power 32 mW; radiation absorbed dose 0.25 Mrad to 12 Mrad; radiation hardness; radiation harsh environment; radiation-induced leakage current; radiation-resistant ASIC; wire-bonding; Application specific integrated circuits; Degradation; Detectors; Leakage currents; MOS devices; Noise; Radiation effects; ASIC; SDD; radiation-resistant; x-ray spectrometer;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2013.2268980
Filename :
6555961
Link To Document :
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