Title :
A new test structure for evaluation of extrinsic oxide breakdown
Author :
Shiga, Katsuya ; Komori, Junko ; Katsumata, Masalumi ; Teramoto, Akinobu ; Sekine, Masaliro
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A new test structure for evaluation of extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability is shown. By using this new test structure, activation energies for not only the intrinsic breakdown but also for the extrinsic breakdown are obtained
Keywords :
MOS capacitors; MOS integrated circuits; dielectric thin films; electric breakdown; failure analysis; integrated circuit reliability; integrated circuit testing; MOS capacitor test structures; Si; SiO2-Si; activation energy; active gate area; extrinsic breakdown; extrinsic oxide breakdown; intrinsic breakdown; reliability; test structure; Accuracy; Electric breakdown; Electrodes; Laboratories; MOS capacitors; MOS devices; Stress; Testing; Ultra large scale integration; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688068
