• DocumentCode
    2961347
  • Title

    Thyristors and triacs control by a high frequency sine signal

  • Author

    Mauriac, C. ; Raingeaud, Y. ; Baillou, J. ; Gonthier, L. ; Pezzani, R.

  • Author_Institution
    Lab. of Power Microelectron., Tours Univ., France
  • Volume
    2
  • fYear
    2004
  • fDate
    4-7 May 2004
  • Firstpage
    1029
  • Abstract
    The aim of this paper is to present a new control mode of AC switch (thyristors, triacs ...). The applied signal on the device gate is a "high frequency" alternating sine, instead of a pulse-shaped signal. This solution has been retained in order to integrate galvanic isolation with power-controlled switches. Control by sine signal implements the accumulation of electrical charges inside the structure leading to the SCR (silicon controlled rectifier) firing. The efficiency of the gate signal is conditioned by the architecture of the semiconductor device, particularly the gate-cathode junction which has a "pilot" role in the firing. Comprehension of physical phenomena, which occur in the switch and more precisely in the gate\´s area, during the firing phase, allows us to adapt the control circuit or to imagine new SCR structures optimised for a high frequency control.
  • Keywords
    pulse shaping circuits; semiconductor switches; thyristors; AC switch thyristor control mode; device gate; frequency control; galvanic isolation; gate-cathode junction; high frequency sine signal; power-controlled switches; pulse-shaped signal; semiconductor device; silicon controlled rectifier; triacs control mode; Current measurement; Diodes; Frequency; Galvanizing; Laboratories; Microelectronics; Power semiconductor switches; Thyristors; VHF circuits; Voltage control; Galvanic isolation; SCR; Triac;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics, 2004 IEEE International Symposium on
  • Print_ISBN
    0-7803-8304-4
  • Type

    conf

  • DOI
    10.1109/ISIE.2004.1571955
  • Filename
    1571955