DocumentCode
2961347
Title
Thyristors and triacs control by a high frequency sine signal
Author
Mauriac, C. ; Raingeaud, Y. ; Baillou, J. ; Gonthier, L. ; Pezzani, R.
Author_Institution
Lab. of Power Microelectron., Tours Univ., France
Volume
2
fYear
2004
fDate
4-7 May 2004
Firstpage
1029
Abstract
The aim of this paper is to present a new control mode of AC switch (thyristors, triacs ...). The applied signal on the device gate is a "high frequency" alternating sine, instead of a pulse-shaped signal. This solution has been retained in order to integrate galvanic isolation with power-controlled switches. Control by sine signal implements the accumulation of electrical charges inside the structure leading to the SCR (silicon controlled rectifier) firing. The efficiency of the gate signal is conditioned by the architecture of the semiconductor device, particularly the gate-cathode junction which has a "pilot" role in the firing. Comprehension of physical phenomena, which occur in the switch and more precisely in the gate\´s area, during the firing phase, allows us to adapt the control circuit or to imagine new SCR structures optimised for a high frequency control.
Keywords
pulse shaping circuits; semiconductor switches; thyristors; AC switch thyristor control mode; device gate; frequency control; galvanic isolation; gate-cathode junction; high frequency sine signal; power-controlled switches; pulse-shaped signal; semiconductor device; silicon controlled rectifier; triacs control mode; Current measurement; Diodes; Frequency; Galvanizing; Laboratories; Microelectronics; Power semiconductor switches; Thyristors; VHF circuits; Voltage control; Galvanic isolation; SCR; Triac;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, 2004 IEEE International Symposium on
Print_ISBN
0-7803-8304-4
Type
conf
DOI
10.1109/ISIE.2004.1571955
Filename
1571955
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