A new characterization method for accurate capacitor matching measurements using pseudo-floating gate test structures in submicron CMOS and BiCMOS technologies

Author

Dit Buisson, O. Roux ; Morin, G. ; Paillardet, F. ; Mazaleyrat, E.

Author_Institution

SGS-Thomson Microelectron., Crolles, France

fYear

1998

fDate

23-26 Mar 1998

Firstpage

223

Lastpage

227

Abstract

In deep submicron CMOS and BiCMOS technologies, antenna effects affect the floating gate charge of conventional floating gate test structures, dedicated to capacitor matching measurement. In this paper, a new pseudo-floating gate test structure is designed. After test structure and modeling presentation, the testing method and results are given for several capacitor layouts (poly-poly and metal-metal)

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; MOS capacitors; capacitance measurement; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit testing; BiCMOS technology; CMOS technology; Si; SiO₂-Si; antenna effects; capacitor layout; capacitor matching measurement; capacitor matching measurements; characterization method; floating gate charge; floating gate test structures; metal-metal capacitor; modeling; poly-poly capacitor; pseudo-floating gate test structures; test structure; testing method; Antenna measurements; CMOS technology; Capacitance measurement; Capacitors; Current measurement; Diodes; MOSFET circuits; Protection; Testing; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on

Conference_Location

Kanazawa

Print_ISBN

0-7803-4348-4

Type

conf

DOI

10.1109/ICMTS.1998.688096

Filename

688096