Title :
A 4mA, 0.25 SiGe, 23GHz BiFET Low Noise Amplifier
Author :
Taris, T. ; Seller, N. ; Toupe, R. ; Lapuyade, H. ; Begueret, J.B. ; Deval, Y.
Author_Institution :
Univ. of Bordeaux 1, Talence
Abstract :
The full aspects of a 23 GHz BiFET LNA implementation are reported in this work. Integrated in a 0.25 mum BiCMOS technology, the circuit exhibits a 14 dB gain at 22.8 GHz for a 4 mA current consumption under 2.5 V. S11 and S22 parameters are less than -16 dB and -13 dB respectively. A 6.9 dB minimum noise figure is obtained at 22.4 GHz. A large part of the paper also deals with high frequency layout considerations. Indeed useful techniques dedicated to integrated microstrip waveguides and RF interconnections are proposed based on 3D electromagnetic-field simulations.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; field effect transistors; low noise amplifiers; 3D electromagnetic-field simulations; BiCMOS technology; BiFET low noise amplifier; RF interconnections; SiGe; current 4 mA; frequency 22.8 GHz; frequency 23 GHz; high frequency layout; integrated microstrip waveguides; size 0.25 mum; voltage 2.5 V; BiCMOS integrated circuits; Electromagnetic waveguides; Frequency; Gain; Germanium silicon alloys; Integrated circuit technology; Low-noise amplifiers; Microstrip; Noise figure; Silicon germanium;
Conference_Titel :
Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on
Conference_Location :
Nice
Print_ISBN :
1-4244-0395-2
Electronic_ISBN :
1-4244-0395-2
DOI :
10.1109/ICECS.2006.379964
