Low Power 38-GHz UWB Tunable LNA Design Using SiP Technology

Author

Chen, Yang Chuan ; Li, Chun-Hsing ; Huang, J.K. ; Kuo, Chien-Nan ; Cheng, Yu Ting

Author_Institution

MetiaTek Inc., Hsinchu

fYear

2006

fDate

10-13 Dec. 2006

Firstpage

1026

Lastpage

1029

Abstract

In this paper we present a tunable ultra-wideband LNA using system-in-package solution to enhance gain and noise performance. Several high-Q MEMS inductors are employed at the input matching network and the tunable resonator load. SiP integration is realized by Au-Au thermal compression bond of low electrical parasitic effects. It is found those inductors improve noise figure by 2 dB and help achieve gain flatness in a broad frequency range of 3-to 8-GHz.

Keywords

inductors; low noise amplifiers; low-power electronics; micromechanical resonators; microwave amplifiers; system-in-package; ultra wideband technology; Au-Au thermal compression bond; SiP technology; UWB tunable LNA design; frequency 3 GHz to 8 GHz; high-Q MEMS inductor; low electrical parasitic effect; low noise amplifier; matching network; system-in-package solution; tunable resonator load; Bonding; Fabrication; Impedance matching; Inductors; Linearity; Micromechanical devices; Radio frequency; Resonator filters; Tunable circuits and devices; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on

Conference_Location

Nice

Print_ISBN

1-4244-0395-2

Electronic_ISBN

1-4244-0395-2

Type

conf

DOI

10.1109/ICECS.2006.379966

Filename

4263544