DocumentCode
2962241
Title
The molar volume of silicon: discrepancies and limitations
Author
Deslattes, R.D. ; Kessler, E.G., Jr.
Author_Institution
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear
1998
fDate
6-10 July 1998
Firstpage
460
Lastpage
461
Abstract
A new representation of the current molar volume discrepancy is offered which attends to a previous incorrect account of early NBS work. First non-null test results are presented from comparisons of discrepant samples. A discussion of intrinsic limitations of melt grown crystals is included.
Keywords
constants; crystal growth from melt; density measurement; interstitials; silicon; vacancies (crystal); voids (solid); Avogadro constant determination; EPR signal; Si; comparisons of discrepant samples; interstitials; intrinsic limitations; mean molar mass; melt grown crystals; molar volume discrepancy; non-null test results; vacancies; voids; Cleaning; Crystalline materials; Crystals; Density measurement; Europe; Metrology; NIST; Silicon; Steel; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 1998 Conference on
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-5018-9
Type
conf
DOI
10.1109/CPEM.1998.700004
Filename
700004
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