Quantum-wires and -boxes based on GaInAsP/InP and related materials for advanced semiconductor lasers

Author

Arai, Shigehisa

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

fYear

1996

fDate

21-25 Apr 1996

Firstpage

7

Lastpage

10

Abstract

A great success in semiconductor lasers has been brought by developments in epitaxial growth technology to realize high quality quantum-well structures of precisely controlled thickness and compositions. Further high-performance characteristics, such as low-threshold current and high-efficiency operations, can be attained by adopting quantum-wire and quantum-box structures. To meet this objective, very low-damage fabrication technology of ultra-fine structures with high accuracy is required, and various fabrication methods have been investigated. Latest results on the fabrication processes and lasing properties of quantum-wire and quantum-box lasers are reviewed

Keywords

III-V semiconductors; epitaxial growth; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; semiconductor quantum dots; semiconductor quantum wires; GaInAsP-InP; epitaxial growth technology; high-efficiency operations; lasing properties; low-damage fabrication technology; low-threshold current; quantum-boxes; quantum-wires; semiconductor lasers; ultra-fine structures; Chemical lasers; Indium phosphide; Lithography; Optical device fabrication; Optical materials; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Substrates; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491920

Filename

491920