• DocumentCode
    296311
  • Title

    Growth of Al0.48In0.52As/Ga0.47In 0.53As heterostructures lattice relaxed on GaAs and lattice matched on InP

  • Author

    Haupt, M. ; Ganser, P. ; Köhler, K. ; Emminger, S. ; Müller, S. ; Rothemund, W.

  • Author_Institution
    Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
  • fYear
    1996
  • fDate
    21-25 Apr 1996
  • Firstpage
    89
  • Lastpage
    92
  • Abstract
    Ternary Al0.48In0.52As/Ga0.47In 0.53As heterostructures lattice matched to InP offer a wide range of applications for electronic and opto-electronic devices. This material system is especially suitable for applications in the long wavelength optical communication range at wavelengths between 1.3 and 1.55 μm. Interesting as well is the high electron mobility and concentration achieved in doped Al0.48In0.52As/Ga 0.47In0.53As heterostructures for the design of high speed field effect transistors. Since InP substrates are generally more expensive in contrast to the high quality GaAs substrates it seems desirable to combine the advantages of Al0.48In0.52As/Ga0.47In0.53 As heterostructures with low cost and availability of large GaAs substrates
  • Keywords
    III-V semiconductors; aluminium compounds; electron density; electron mobility; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor heterojunctions; 1.3 to 1.55 mum; Al0.48In0.52As-Ga0.47In0.53 As; Al0.48In0.52As/Ga0.47In0.53 As heterostructures; GaAs; InP; InP substrates; MBE; concentration; doped Al0.48In0.52As/Ga0.47In 0.53As heterostructures; high electron mobility; high speed field effect transistors; large GaAs substrates; lattice matched structures; long wavelength optical communication; low cost; Availability; Costs; Electron mobility; FETs; Gallium arsenide; Indium phosphide; Lattices; Optical fiber communication; Optical materials; Optoelectronic devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
  • Conference_Location
    Schwabisch-Gmund
  • Print_ISBN
    0-7803-3283-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1996.491942
  • Filename
    491942