Title :
Growth of Al0.48In0.52As/Ga0.47In 0.53As heterostructures lattice relaxed on GaAs and lattice matched on InP
Author :
Haupt, M. ; Ganser, P. ; Köhler, K. ; Emminger, S. ; Müller, S. ; Rothemund, W.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
Ternary Al0.48In0.52As/Ga0.47In 0.53As heterostructures lattice matched to InP offer a wide range of applications for electronic and opto-electronic devices. This material system is especially suitable for applications in the long wavelength optical communication range at wavelengths between 1.3 and 1.55 μm. Interesting as well is the high electron mobility and concentration achieved in doped Al0.48In0.52As/Ga 0.47In0.53As heterostructures for the design of high speed field effect transistors. Since InP substrates are generally more expensive in contrast to the high quality GaAs substrates it seems desirable to combine the advantages of Al0.48In0.52As/Ga0.47In0.53 As heterostructures with low cost and availability of large GaAs substrates
Keywords :
III-V semiconductors; aluminium compounds; electron density; electron mobility; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor heterojunctions; 1.3 to 1.55 mum; Al0.48In0.52As-Ga0.47In0.53 As; Al0.48In0.52As/Ga0.47In0.53 As heterostructures; GaAs; InP; InP substrates; MBE; concentration; doped Al0.48In0.52As/Ga0.47In 0.53As heterostructures; high electron mobility; high speed field effect transistors; large GaAs substrates; lattice matched structures; long wavelength optical communication; low cost; Availability; Costs; Electron mobility; FETs; Gallium arsenide; Indium phosphide; Lattices; Optical fiber communication; Optical materials; Optoelectronic devices;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491942
