Title :
Versatile reactive ion beam etching (RIBE) of InP-based material using CH4/H2/Ar chemistry
Author :
Boury, P. ; Landgren, G.
Author_Institution :
Dept. of Electron., Kungliga Tekniska Hogskolan, Kista, Sweden
Abstract :
We have investigated RIBE processes for etching InP and related materials using the non-corrosive CH4/H2/Ar gas chemistry. The etch rates, surface morphology and etch profiles and have been studied as a function of plasma parameters and gas mixtures. The equipment has been an inductively coupled RF ion gun with a two grid extraction system. Chamber pressure during the process has been about 10 -4 mbar. Sample temperatures depended somewhat on the energy and etch time but were always maintained below 100 C
Keywords :
III-V semiconductors; indium compounds; reaction rate constants; sputter etching; surface chemistry; surface structure; 100 C; 10E-4 mbar; Ar; CH4/H2/Ar chemistry; H2; InP; InP-based material; RIBE; etch profiles; etch rates; etch time; gas mixtures; inductively coupled RF ion gun; noncorrosive CH4/H2/Ar gas chemistry; plasma parameters; reactive ion beam etching; surface morphology; Argon; Etching; Indium phosphide; Ion beams; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature; Radio frequency; Surface morphology;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491949
