Title :
Resonant tunneling heterojunction bipolar transistors and their applications in high functionality/speed digital circuits
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Resonant tunneling heterojunction bipolar transistors (RTBT´s) or RTD and HBT combinations are particularly suitable for very high speed/low-power digital circuits. Here we will present recent results on InP-based devices and their applications
Keywords :
III-V semiconductors; bipolar digital integrated circuits; heterojunction bipolar transistors; indium compounds; resonant tunnelling transistors; III-V semiconductors; InP; RTBT; circuit functionality; high speed digital circuits; low-power digital circuits; resonant tunneling heterojunction bipolar transistors; Application software; CMOS technology; Circuit simulation; Delay effects; Digital circuits; Equivalent circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Resonant tunneling devices;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491952
