DocumentCode :
2963150
Title :
Effect of lead frame material on plastic-encapsulated IC package cracking under temperature cycling
Author :
Nishimura, Asao ; Kawai, Sueo ; Murakami, Gen
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
fYear :
1989
fDate :
22-24 May 1989
Firstpage :
524
Lastpage :
530
Abstract :
Differences in the package cracking mechanisms among lead frame materials are studied both by analysis and experiment. The results of thermal stress analysis indicate that encapsulant stress in the Alloy 42 lead frame package is increased by delamination of the chip pad´s bottom surface. Conversely, stress in the copper lead frame package is mainly determined by delamination of the die bonding layer. The mechanisms predicted for both packages are experimentally verified by ultrasonic inspection of the chip pad´s bottom surfaces and thermal-deformation-based observation of package cross sections. The effect of material properties on cracking is also studied to find ways to prevent cracking. Recommendations are made for lead-frame, encapsulant, and die-bonding materials
Keywords :
VLSI; crack-edge stress field analysis; encapsulation; integrated circuit technology; packaging; thermal stress cracking; Alloy 42 lead frame package; Cu lead frame package; FeNi alloy; VLSI technology; die bonding layer delamination; encapsulant stress; lead frame material effect; plastic-encapsulated IC package cracking; temperature cycling; thermal stress analysis; ultrasonic inspection; Copper; Delamination; Lead; Microassembly; Plastic integrated circuit packaging; Plastic packaging; Surface cracks; Temperature; Thermal expansion; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components Conference, 1989. Proceedings., 39th
Conference_Location :
Houston, TX
Type :
conf
DOI :
10.1109/ECC.1989.77800
Filename :
77800
Link To Document :
بازگشت