• DocumentCode
    296317
  • Title

    Orientation effect on Si3N4 passivated InP/InGaAs heterojunction bipolar transistors

  • Author

    Sachelarie, D. ; Pelouard, J.-L. ; Benchimol, J.L.

  • Author_Institution
    ICCE, Bucharest, Romania
  • fYear
    1996
  • fDate
    21-25 Apr 1996
  • Firstpage
    149
  • Lastpage
    151
  • Abstract
    The paper investigates experimentally, for the first time, the emitter orientation effects on the Gummel plots and emitter-base reverse characteristic of the Si3N4 fully passivated InP/InGaAs heterojunction bipolar transistors
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; Gummel plots; InP-InGaAs; Si3N4; Si3N4 passivated HBT; emitter orientation effect; emitter-base reverse characteristic; heterojunction bipolar transistors; Epitaxial layers; Etching; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Shape; Stress; Substrates; Telecommunications; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
  • Conference_Location
    Schwabisch-Gmund
  • Print_ISBN
    0-7803-3283-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1996.491957
  • Filename
    491957
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=296317