Title :
Fabrication of an InP/GaInAsP based integrated gain-coupled DFB laser/M-Z phase modulator for 10 Gb/sec fiber optic transmission
Author :
Pütz, N. ; Adams, D.M. ; Rolland, C. ; Moore, R. ; Mallard, R.
Author_Institution :
Bell-Northern Res., Ottawa, Ont., Canada
Abstract :
The monolithic integration of lasers and modulators is an attractive approach for the manufacture of compact, low-chirp light sources with low packaging costs for high bit rate (10 Gb/s) long haul fiber optic transmission systems. In this presentation we describe the fabrication of an InGaAsP-InP based Mach/Zehnder phase modulator with a gain-coupled DFB QW laser
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; distributed feedback lasers; electro-optical modulation; electroabsorption; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; integrated circuit packaging; integrated optoelectronics; light sources; optical communication equipment; optical couplers; optical fabrication; phase modulation; quantum well lasers; semiconductor growth; 1.55 mum; 10 Gbit/s; 100 km; Gb/sec fiber optic transmission; InGaAsP-InP based Mach/Zehnder phase modulator; InP-InGaAsP; InP/GaInAsP based integrated gain-coupled DFB laser; M-Z phase modulator; compact low-chirp light sources; gain-coupled DFB QW laser; high bit rate; long haul fiber optic transmission systems; low packaging costs; monolithic integration; Bit rate; Costs; Fiber lasers; Indium phosphide; Light sources; Manufacturing; Monolithic integrated circuits; Optical device fabrication; Optical modulation; Packaging;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491958
