Title :
Record tuning range of a 1.55 μm DBR laser realized by selective area growth
Author :
Delprat, D. ; Silvestre, L. ; Ougazzaden, A. ; Delorme, F. ; Slempkes, S. ; Ramdane, A.
Author_Institution :
France Telecom, CNET, Bagneux, France
Abstract :
Wavelength tunable lasers are key devices for WDM optical communication systems. Several approaches have been used to realize these components such as butt-coupling, vertical coupling or Selective Area Growth (SAG). We used the latter owing to its simplicity for achieving, in only one epitaxial step, regions of different transition energy and high optical coupling factor. An optimized guide structure allowed us to reach a tuning range of 7 nm, which is to the best of our knowledge a record with this approach. The use of strained MQWs allows the active-passive wavelength detuning to be reduced down to about 80 nm which results in a quite stable output power (+1 dB) during tuning of the laser diode
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser tuning; optical couplers; optical fabrication; optical transmitters; quantum well lasers; wavelength division multiplexing; 1.55 mum; 80 nm; DBR laser; InGaAsP; WDM optical communication systems; Wavelength tunable lasers; active-passive wavelength detuning; butt-coupling; epitaxial step; laser diode; optical coupling factor; optimized guide structure; selective area growth; stable output power; strained MQWs; transition energy; tuning range; vertical coupling; Distributed Bragg reflectors; Laser transitions; Laser tuning; Optical coupling; Optical fiber communication; Optical tuning; Power generation; Quantum well devices; Tunable circuits and devices; Wavelength division multiplexing;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491961