MOVPE growth of high performance photodetector structures using TBA and TBP

Author

Weber, J. ; Nowitzki, A. ; Gyuro, I. ; Scherb, J.

Author_Institution

Alcatel Telecom Res. Div., Stuttgart, Germany

fYear

1996

fDate

21-25 Apr 1996

Firstpage

195

Lastpage

198

Abstract

Tertiary-butyl-arsine (TEA) and tertiary-butyl-phosphine (TBP) are common alternative group V precursors for the replacement of the highly toxic arsine and phosphine. We demonstrate, that high performance devices like pin-photodetectors grown with TBA and TBP show excellent device characteristics. Extremely low dark currents of I_D<100 pA at -5 V are found for 55 μm planar pin-photodiodes with an yield of 99%. Also planar 300 μm (Ø) diodes and mesa pin photodetectors (Ø=40 μm) were processed and investigated. In both cases very low dark currents of I_D<0.6 nA at -5 V were measured. Beside safety aspects, the improvements in device properties together with high yields (>95%) demonstrate the suitability of TBA and TBP for the growth of high performance pin-photodetectors

Keywords

III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; p-i-n photodiodes; photodetectors; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 0.6 nA; 100 pA; InP-InGaAs; MOVPE; dark currents; high performance photodetector structures; photodiodes; pin-photodetectors; tertiary-butyl-arsine; tertiary-butyl-phosphine; Absorption; Dark current; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Photodetectors; Photodiodes; Production; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491970

Filename

491970